Multi-layer integrated semiconductor structure having an electrical shielding portion

ABSTRACT

A multi-layer integrated semiconductor structure is provided, which includes at least a first semiconductor structure and a second semiconductor structure coupled together via an interface. The interface includes at least a first portion adapted to provide a communication interface between the first semiconductor structure and the second semiconductor structure and at least a second portion adapted to reduce electrical interference between the first semiconductor structure and the second semiconductor structure.

CROSS REFERENCE TO RELATED APPLICATION

This application claims the benefit under 35 U.S.C. §119(e) of U.S.Provisional Application No. 60/437,549, filed on Dec. 31, 2002,entitled, A Multi-Layer Integrated Semiconductor Structure, which ishereby incorporated by reference in its entirety.

FIELD OF THE INVENTION

The present invention relates generally to a multi-layer integratedsemiconductor structure and, more specifically, to a multi-layerintegrated semiconductor structure that includes one or more electricalinterference shielding portions. The purpose of such structures is toelectrically isolate active devices fabricated in one semiconductorlayer from those of another semiconductor layer of a multi-layersemiconductor structure.

BACKGROUND

The rapid scaling of CMOS technology and the push for higher levels ofintegration on a single chip have led to the necessity of placing entiresystems on a chip (SOC). Wireless systems, in particular, rely onincreased integration of the various components for performanceenhancement. However, one of the most significant problems to therealization of an SOC is the parasitic interactions (e.g. electricalnoise or interference) between large complex digital circuits and highlysensitive analog circuits. Performance of a wireless system is highlydependent on the ability to receive low-level signals while eliminatinginterfering signals. Substrate noise can be a significant interferer.

The noise coupling between the analog and digital components is aproblem for mixed-signal integration. Three mechanisms govern substratenoise in integrated circuits. The first is the injection mechanism,whereby relatively large transient currents induced during digitalswitching work in tandem with circuit parasitics to induce noise on thepower and ground lines as well as in the substrate. The second mechanismis propagation, for which noise travels from a noise generating elementof the SOC through the common substrate to corrupt another element ofthe SOC, such as sensitive analog circuits. The third mechanism isreception, which explains how the noise couples to sensitive nodes. Thisoccurs through source/drain capacitive coupling, power and groundbounce, and the backgate effect.

By breaking the resistive connection that is present as a result of theshared substrate, substrate noise can be significantly reduced.Three-dimensional integration is a technology whereby systems can befabricated on separate wafers and subsequently bonded to form a singlechip. Particularly noisy systems could be fabricated on a separate layerfrom more sensitive circuits thereby eliminating any noise propagationin the substrate.

The noise problem is mitigated in three-dimensional semiconductorstructures; however, the problem is not completely solved. Thethree-dimensional semiconductor structure includes a number ofindividual integrated circuit structures which are stacked and bondedtogether. In the three-dimensional semiconductor structure, electricalnoise or interference created by one device layer can be induced in thesubstrate of the adjacent layer due to the proximity of high-speedswitching lines.

Therefore, it would be desirable to provide a structure that providessubstantial shielding to electrical noise or interference communicatedbetween adjacently bonded device layers of the three-dimensionalsemiconductor structure.

SUMMARY OF THE INVENTION

In accordance with the present invention, a multi-layer integratedsemiconductor structure includes a first semiconductor layer that iscomposed of a number of active semiconductor devices that is separatedfrom the second semiconductor layer also composed of activesemiconductor devices by an interface whose purpose is two-fold: toelectrically isolate the first layer from the second as well as to actas an interconnect layer.

With this particular arrangement, a multi-layer integrated semiconductorstructure capable of having mixed-signal circuits is provided. Theproposed isolation structure can be effectively integrated in amixed-technology application. For example, the first semiconductordevice layer may correspond to a digital technology; whereas, the seconddevice layer is fabricated using an analog technology. The isolationstructure would substantially reduce the interference generated by thedigital layer and its effect on the sensitive analog circuits.

BRIEF DESCRIPTION OF THE DRAWING

The foregoing and other objects of this invention, the various featuresthereof, as well as the invention itself, can be more fully understoodfrom the following description, when read together with the accompanyingdrawings in which:

FIG. 1 is an exemplary cross-sectional view of a multi-layer integratedsemiconductor structure including the electrical interference shieldingstructure according to the present invention;

FIG. 2 is an exemplary cross-sectional view of another embodiment of amulti-layer integrated semiconductor structure including the electricalinterference shielding portion, as shown in FIG. 1;

FIG. 3 is an exemplary cross-sectional view of yet another embodiment ofa multi-layer integrated semiconductor structure including theelectrical interference shielding portion, as shown in FIG. 1;

FIG. 4 is an exemplary cross-sectional view of yet another embodiment ofa multi-layer integrated semiconductor structure including theelectrical interference shielding portion, as shown in FIG. 1;

FIG. 5 is a flow chart illustrating process steps for fabricating themulti-layer integrated semiconductor structures of FIGS. 1-4;

FIG. 6 shows a number of graphs representing levels of electricalisolation provided by various electrical interference shielding portionsincorporated in the sample simulation structures of FIGS. 7-9;

FIG. 7 is a first sample simulation structure including one variation ofan electrical interference shielding portion;

FIG. 8 is a second sample simulation structure including anothervariation of an electrical interference shielding portion; and

FIG. 9 is a third sample simulation structure including yet anothervariation of an electrical interference shielding portion.

DETAILED DESCRIPTION OF THE INVENTION

Referring to FIG. 1, a multi-layer integrated semiconductor structure 10includes at least a first device layer 20 and a second device layer 40.The first and second device layers (20 and 40 respectively) representseparate semiconductor device structures, each of which may include anumber of layers. For example, the first device layer 20 may correspondto a first semiconductor wafer consisting of several semiconductordevices and metal interconnect layers while the second device layer 40corresponds to a second semiconductor wafer consisting of severalsemiconductor devices and metal interconnect layers. In addition, devicelayers 20, 40 may also represent individual dies cut from a wafer. Thefirst and second device layers 20, 40 are bonded together by first andsecond interface portions 38 a, 38 b. In one embodiment, the firstinterface portion 38 a is employed for electrically connecting the firstand second device layers 20, 40, while the second interface portion 38 bis employed for providing electrical shielding to interference orcross-talk between the first and second device layers 20, 40. In afurther embodiment, the second interface portion 38 b can be grounded toprovide further enhanced electrical shielding to interference orcross-talk between the first and second device layers 20, 40. The secondinterface portion 38 b can be formed of a material that also serves toadhesively couple the first and second device layers 20, 40.

In one embodiment, the first and second interface portions 38 a, 38 bcan be formed of a conductive bonding material, such as copper (Cu) or aCu alloy or other suitably appropriate conductive and/or bondingmaterials. In other embodiments, the first interface portion 38 a can beformed of a conductive material, as described above, and the secondinterface portion 38 b can be formed of a dielectric material or otherinsulating material, which includes bonding and/or adhesive properties.In the exemplary embodiment, the first and second interface portions 38a, 38 b are disposed on the top surface 34 a of the dielectric material34 prior to bonding the first and second device layers 20, 40. It shouldbe noted that in other embodiments, the first and second interfaceportions 38 a, 38 b can be alternatively disposed on the bottom surface44 a of the insulating material 44 prior to coupling the first andsecond device layers 20, 40. In yet other embodiments, a portion of eachof the first and second interface portions 38 a, 38 b can be disposed onboth the top surface 34 a of the dielectric material 34 and the bottomsurface 44 a of the insulating material 44 prior to coupling the firstand second device layers 20, 40.

It should be understood that another first and second interface portions38 a′, 38 b′ can be disposed on a top surface 54 a of the second devicelayer 40, which are similar to the first and second interface portions38 a, 38 b, as described above. In this arrangement, an additionaldevice layer (not shown) can be stacked on top of the second devicelayer 40 in a similar manner as the second device layer 40 is stackedonto the first device layer 20. This process can be repeated to stack aninfinite number of device layers (not shown) onto the previously definedtop device layer for promoting semiconductor structure 10 scalability.The features of electrical shielding provided by the second interfaceportion 38 b in accordance with embodiments of the present inventionwill be described in further detail below in connection with FIGS. 6-9.

The first device layer 20 includes a substrate 26 having a pair of dopedregions 22, 24 formed therein. The doped regions 22, 24 can, forexample, correspond to a source region 22 and a drain region 24 of atransistor. The first device layer 20 further includes insulatingregions 28 a, 28 b. Insulating regions 28 a, 28 b can be provided, forexample, as an oxide film disposed on the silicon substrate 26 adjacentto the doped regions 22, 24, respectively.

In the case where doped regions 22, 24 correspond to source and drainregions 22, 24, the first device layer 20 further includes a gate region30 disposed over the silicon substrate 26 and a channel region definedbetween the source 22 and drain 24 regions. An insulating material 32,such as an oxide film, is provided between the gate region 30 and thesilicon substrate 26. Thus, source, drain and gate regions 22, 24, 30form the electrodes of a field effect transistor (FET).

It should be understood that although reference is made herein tospecific types of circuit elements, such reference is made forconvenience and clarity in the description and is not intended to belimiting. It should be appreciated that the device layer 20 typicallyincludes thousands or millions of doped regions and that circuitelements other that FET's can be formed by doped regions.

One or more layers of dielectric material 34 are disposed over a topsurface 36 of the first device layer for covering a myriad of thehorizontally oriented interconnects or conductive circuit interconnects35 a, 35 b, 35 c, which are formed over the surface 36 of the firstdevice layer 20. A plurality of vertically oriented via-holes 37 a, 37b, 37 c, are formed in the dielectric material 34. In one embodiment,the via-holes 37 a, 37 b, 37 c may, for example, be filled with aconductive plug or material 39 a, 39 b, 39 c, such as tungsten orcopper.

The conductive plugs or material 39 a, 39 b, 39 c are provided in thedielectric material 34 so as to interconnect one or more of theconductive circuit interconnects 35 a, 35 b, 35 c to at least one of thesource 22 or drain 24 regions of the first device layer 20 and/or tointerconnect one or more of the conductive circuit interconnects 35 a,35 b, 35 c to the first conductive interface portion 38 a.

The second device layer 40 includes a silicon substrate 42 having aninsulating layer 44. Insulating layer 44 may be provided, for example,as an oxide layer. Similar to the first device layer 20, the seconddevice layer 40 also includes a pair of doped regions 46, 48 which may,for example, correspond to source and drain regions 46, 48 formed in thesilicon substrate 42. The second device layer 40 also includesinsulating regions 50 a, 50 b. Insulating regions 50 a, 50 b may beprovided, for example, as an oxide film, disposed on the siliconsubstrate 42 adjacent to the source 46 and drain 48 regions,respectively. Device layer 40 further includes a gate region 52 formedon the silicon substrate 42 over a channel region defined between thesources 46 and drains 48 regions. An insulating material 53, such as anoxide film, is provided between the gate region 52 and the siliconsubstrate 42.

One or more layers of dielectric material 54 are disposed over a surface55 of the second device layer 40 for covering a plurality of thehorizontally oriented interconnects or conductive circuit interconnects56 a, 56 b, which are formed over the surface 55 of the second devicelayer 40. A plurality of vertically oriented via-holes 58 a and 58 b areformed in the dielectric material 54. In one embodiment, the via-holes58 a, 58 b are each filled with a conductive material 59 a, 59 b, suchas tungsten or copper. The via-holes 59 a, 59 b are arranged on thedielectric material 54 to interconnect the conductive circuitinterconnects 56 a, 56 b to respective ones of the source 46 or drain 48regions of the second device layer 40.

In the exemplary embodiment of FIG. 1, a first via-hole 37 a of theplurality of vertically oriented via-holes 37 a, 37 b, 37 c is providedin the dielectric material 34 of the first device layer 20. The firstvia-hole 37 a extends from a top surface 34 a of the dielectric material34 downwardly to and exposes a portion of a first conductiveinterconnect 35 a of the plurality of conductive interconnects 35 a, 35b, 35 c. The first via-hole 37 a is dimensioned to accept a conductiveplug 39 a or other conductive material having a first end 39 a′ coupledto the first conductive interconnect 35 a and a second end 39 a″ coupledto the first conductive interface portion 38 a.

A second via-hole 60 provided in the second device layer 40 extends froma bottom surface 44 a of the insulating material 44 upwardly through thesilicon substrate 42 to expose a portion of the doped region 46 of thesecond device layer 40. The second via-hole 60 is dimensioned to accepta conductive plug 62 or other conductive material having a first end 62a coupled to the doped region 46 of the second device layer 40 and asecond end 62 b coupled to the first conductive interface portion 38 a.In this arrangement, the first conductive plug 39 a, the firstconductive interface portion 38 a and the second conductive plug 62collectively provide a direct vertical interconnect between the firstconductive interconnect 35 a of the first device layer 20 and the dopedregion 46 of the second device layer 40.

Referring to FIG. 2, in which like elements of FIG. 1 are providedhaving like reference designations, another exemplary embodiment of amulti-layer integrated semi-conductor structure 10 b in accordance withthe present invention, is shown. The multi-layer integratedsemi-conductor structure 10 b is similar to that described above inconjunction with FIG. 1.

In the multi-layer semiconductor structure 10 b, a first via-hole 37 a′extends from the top surface 34 a of the dielectric material 34downwardly to expose a portion of a first conductive interconnect 35 a′.The first via-hole 37 a′ is dimensioned to accept a conductive plug 39 aor other conductive material having a first end 39 a′ coupled to thefirst conductive interconnect 35 a′ and a second end 39 a″ coupled tothe first conductive interface portion 38 a.

A second via-hole 60 provided in the second device layer 40 extends froma bottom surface 44 a of the insulating material 44 upwardly through theinsulating material 44, the silicon substrate 42 and the insulatingmaterial 50 a located adjacent the doped region 46 and exposes a portionof a first conductive interconnect 56 a of the plurality of conductiveinterconnects 56 a, 56 b in the second device layer 40. The secondvia-hole 60 is dimensioned to accept a conductive plug 62 or otherconductive material having a first end 62 a coupled to the firstconductive interconnect 56 a and a second end 62 b coupled to the firstconductive interface portion 38 a. In this arrangement, the firstconductive plug 39 a, the first conductive interface portion 38 a andthe second conductive plug 62 collectively provide a direct verticalinterconnect between the first conductive interconnect 35 a of the firstdevice layer 20 and the first conductive interconnect 56 a of the seconddevice layer 40.

Referring to FIG. 3, in which like elements of FIGS. 1 and 2 areprovided having like reference designations, another exemplaryembodiment of a multi-layer integrated semiconductor structure 10 c inaccordance with the present invention is shown. The multi-layerintegrated semiconductor structure 10 c is similar to that describedabove in conjunction with FIGS. 1 and 2.

In the multi-layer semiconductor structure 10 c, a first via-hole 37 a″provided in the first device layer 20 extends from a top surface 34 a ofthe dielectric material 34 downwardly to expose a portion of the dopedregion 22 of the first device layer 20. The first via-hole 37 a″ isdimensioned to accept a conductive plug 39 a or other conductivematerial having a first end 39 a′ coupled to the doped region 22 and asecond end 39 a″ coupled to the first conductive interface portion 38 a.Furthermore, one or more of the plurality of conductive interconnects 35a″, 35 b″, 35 c″, such as conductive interconnect 35 a″, can be coupledto the conductive plug 39 a for providing an electrical signal path orother communication relationship between the conductive plug 39 a andother elements (not shown), which may be located elsewhere in thestructure 10C.

A second via-hole 60 provided in the second device layer 40 extends fromthe bottom surface 44 a of the insulating material 44 upwardly throughthe insulating material 44 and through the substrate 42 to expose aportion of a doped region 46 of the second device layer 40. The secondvia-hole 60 is dimensioned to accept a conductive plug 62 or otherconductive material having a first end 62 a coupled to the region 46 ofthe second device layer 40 and a second end 62 b coupled to the firstconductive interface portion 38 a. In this arrangement, the firstconductive plug 39 a, the first conductive interface portion 38 a andthe second conductive plug 62 collectively provide a direct verticalinterconnect between the doped region 22 of the first device layer 20and the doped region 46 of the second device layer 40.

Referring to FIG. 4, in which like elements of FIGS. 1-3 are providedhaving like reference designations, another exemplary embodiment of amulti-layer integrated semiconductor structure 10 d in accordance withthe present invention is shown. The multi-layer integrated semiconductorstructure 10 d is similar to that shown and described above inconjunction with FIGS. 1-3.

In the multi-layer integrated semiconductor structure 10 d, a firstvia-hole 37 provided in the dielectric material 34 and defined on firstdevice layer 20 extends from the top surface 34 a of the dielectricmaterial 34 downwardly to expose a portion of a first conductiveinterconnect 35 a. A height “H₁” of the dielectric material 34 of thefirst device layer 20 can be controlled to control the depth of thefirst via-hole 37 a, which permits predetermined processing durations tobe maintained during formation of the first via-hole 37 a. The firstvia-hole 37 a is dimensioned to accept a conductive plug 39 a or otherconductive material having a first end 39 a′ coupled to the firstconductive interconnect 35 a and a second end 39 a″ coupled to the firstconductive interface portion 38 a.

The second via-hole 60 is formed on the second device layer 40 andextends from the bottom surface 44 a of the insulating material 44upwardly through the insulating material 44, the silicon substrate 42and the insulating material 50 a located adjacent to the source region46 for exposing a portion of a first conductive interconnect 56 alocated on the second device layer 40.

A height “H₂” of the insulating material 44 and a height “H₃” of thesilicon substrate 42, which are both defined on the second device layer40, can each be controlled to control the depth of the second via-hole60, which permits predetermined processing durations to be maintainedduring formation of the second via-hole 60. The second via-hole 60 isdimensioned to accept a conductive plug 62 or other conductive materialhaving a first end 62 a coupled to the first conductive interconnect 56a and a second end 62 b coupled to the first conductive interfaceportion 38 a. In this arrangement, the first conductive plug 39 a, thefirst conductive interface portion 38 a and the second conductive plug62 collectively provide a direct vertical interconnect between the firstconductive interconnect 35 a of the first device layer 20 and the firstconductive interconnect 56 a of the second device layer 40.

Referring to FIG. 5, an exemplary method 100 of forming any one of themulti-layer integrated semiconductor structures 10 (FIG. 1), 10 b (FIG.2), 10 c (FIG. 3) or 10 d (FIG. 4) is shown. At step 110, a first devicelayer (e.g. device layer 20 shown in FIGS. 1-4 above) is processed toform at least a first via-hole (e.g. via-hole 37 a shown above inFIG. 1) having a predetermined depth.

In one embodiment, the first via-hole 37 a exposes a portion of aconductive metal member defined on the first device layer 20, such asthe signal interconnect 35 a.

In another embodiment, such as the embodiment shown in FIG. 3, one endof the first via-hole (e.g. via-hole 37 a″ in FIG. 3) extends downwardlyfrom a first or top surface 34 a of the device layer 20 (FIG. 3). Thefirst via-hole extends downwardly a predetermined depth to expose aportion of a doped region 22 defined on the first device layer 20 (e.g.region 22 of device layer 20 in FIG. 3).

At step 120, a first conductive plug or material is disposed in thefirst via-hole formed on the top surface of the first device layer 20.At step 130, a conductive interface portion (e.g. first interfaceportion 38 a in FIGS. 1-4), which may be provided, for example, ascopper or copper alloy, is disposed over at least the first conductiveplug.

At step 140, the method 100 further includes processing a second devicelayer (e.g. device layer 40 in FIG. 1) to form at least a secondvia-hole (e.g. via-hole 60 in FIG. 1) on a bottom surface thereof andhaving a predetermined depth. In one embodiment, the second via-holeexposes a portion of a doped region 46 defined on the second devicelayer 40 (e.g. source region 46 in FIGS. 1-4). In another embodiment,the second via-hole exposes a portion of a conductive metal line definedon the second device layer 40 (such as the signal interconnect 56 a).

At step 150, a second conductive plug 62 or material is disposed in thesecond via-hole 60 formed on the bottom surface 44 a of the seconddevice layer 40. The second conductive plug can include similar materialas the first conductive plug 39 a.

At step 155, another conductive interface portion (not shown), which issimilar to the first conductive interface 38 a disposed on the firstconductive plug, is disposed on at least the second conductive plug 62.This conductive interface portion disposed on the second conductive pug62 combines with the first conductive interface 38 a disposed on thefirst conductive plug when the first device layer 20 and the seconddevice layer 40 are coupled together, which will be described in furtherdetail below.

At step 160, the second device layer 40 is positioned and aligned overand in a contact relationship with the first device layer 20. At step170, the first device layer 20 is coupled to the second device layer 40,via the first conductive interface portion 38 a, to form a unitarymulti-layer semiconductor device structure, such as the structures 10,10 b, 10 c or 10 d respectively depicted in FIGS. 1-4 above.

Although not specifically shown, it should be understood that themulti-layer semiconductor structures 10, 10 b, 10 c or 10 d describedabove in conjunction with FIGS. 1, 2, 3 and 4, respectively are eachscaleable to include a plurality of additional device layers (notshown), such as third and fourth device layers. In addition, it shouldbe understood that the first device layer 20 can be constructed andarranged to operate as complex systems, such as digital signalprocessors (DSPs) and memories, as well as a number of other digitaland/or analog based system. In addition, the first device layer 20 canbe constructed and arranged to operate using optical components, such asoptical cross-point switches and optical-to-electronic converters, aswell as a number of other optical based devices. Furthermore, the firstdevice layer 20 can be constructed and arranged to operate usingmicro-electromechanical (MEMS) components, such as micro-motors, sensorsand actuators, as well as a number of other MEMS based devices.

It should be further understood that the second device layer 40 can besimilarly constructed and arranged to operate as the first device layer20, as described above. In one embodiment, the first device layer 20 andthe second device layer 40 can each be constructed and arranged tooperate using similar components and/or devices, as described above, toform a unitary multi-layer structure. In another embodiment, the firstdevice layer 20 and the second device layer 40 can each be constructedand arranged to operate using dissimilar components and/or devices, asdescribed above, to form a unitary mixed signal multi-layer structure.

Although the multi-layer semiconductor structures 10, 10 b, 10 c or 10 ddescribed above in conjunction with FIGS. 1, 2, 3 and 4, respectivelyrepresent the coupling of device layer 20 and device layer 40, it shouldbe understood that in an exemplary embodiment, the device layer 20 canrepresent a single lower die element and the device layer 40 canrepresent a single upper die element. In this exemplary embodiment, themulti-layer semiconductor structures 10, 10 b, 10 c or 10 d describedabove in conjunction with FIGS. 1, 2, 3 and 4, respectively showdie-to-die bonding using the first conductive interface portion 38 a toelectrically couple the lower die element to the upper die element.

Furthermore, in another exemplary embodiment, the device layer 20 canrepresent one element of a plurality of elements located on a singlelower semiconductor wafer (not shown) and the device layer 40 canrepresent one element of a plurality of elements located on a singleupper semiconductor wafer (not shown). In this exemplary embodiment, themulti-layer semiconductor structures 10, 10 b, 10 c or 10 d describedabove in conjunction with FIGS. 1, 2, 3 and 4, respectively show aportion of a wafer-to-wafer bonding using the first interface portion 38a to electrically couple one element of the plurality of elements of thelower wafer to one element of the plurality of elements of the upperwafer.

Referring now to FIG. 6, shown are a number of graphs (e.g. A-G)representing a comparative analysis of electrical isolation levelsbetween elements of a number of sample simulation structures 70, 80, 90,as shown in FIGS. 7-9, respectively. The curves of FIG. 6 furtherrepresent different electrical isolation levels sensed between elementsof the sample simulation structures 70, 80, 90, when conductive ordielectric materials are used as interface portions 38 b ₁, 38 b ₂, 38 b₃ respectively shown in the sample simulation structures 70, 80, 90, ofFIGS. 7-9, which will be described in further detail below. The curvesof FIG. 6 are plotted as energy in decibels (dB) as a function offrequency in Giga-Hertz (GHz). It should be understood that theinterface portions 38 b ₁, 38 b ₂, 38 b ₃ are constructed and arrangedto provide similar features as the second interface portion 38 brepresented throughout the various exemplary embodiments of the presentinvention shown in FIGS. 1-4.

Referring to FIGS. 6 and 7 collectively, the sample simulation structure70 includes an electrically conductive structure 70 a of predeterminedwidth, “W₁.” A pair of insulating portions 70 b, 70 c are disposed onadjacent sides of the conductive structure 70 a. A third layer ofinsulating material 70 d is disposed over the electrically conductivestructure 70 a and the first and second insulating portions 70 b, 70 c.The interface portion 38 b, of width “W₂” is disposed over the thirdlayer of insulating material 70 d. A fourth layer of insulating material70 e is disposed over the interface portion 38 b, followed by thedisposal of a conductive substrate 70 f of width “W₃” over the fourthlayer of insulating material 70 e. In the sample simulation structure70, the interface portion 38 b ₁ serves to provide electrical shieldingand/isolation between the electrically conductive structure 70 a and theconductive substrate 70 f.

In the exemplary embodiment, the width W₁ of the electrically conductivestructure 70 a is approximately 1 μm; the width W₂ of the interfaceportion 38 b ₁ is approximately 100 μm and the width W₃ of theconductive substrate 70 f is approximately 20 μm with a resistivity ofapproximately 10 Ωcm.

Isolation between two ports with the transmission coefficient S21 whereport 1 is structure 70 a, and port 2 is structure 70 f. The S21 data forsample simulation structure 70 is shown in curve “A” of FIG. 6, whichrepresents the electrical interference or cross-talk level sensedbetween the conductive structure 70 a (FIG. 7) and the conductivesubstrate 70 f (FIG. 7) when grounded Cu-material is used as theinterface portion 38 b (FIG. 7). The interface portion is not limited toCu. Other conductive materials provide the same S21 characteristics. Forthe purposes of the analysis, copper was chosen as an exemplaryinterface material. When the Cu-material used as the interface portion38 b of structure 70 is left floating, the electrical interference orcross-talk sensed between the conductive structure 70 a and theconductive substrate 70 f is depicted in FIG. 7 by curve B. Further,replacing the Cu material of the interface portion 38 b, with an oxideor other insulating material and re-executing the S21 simulation test onthe sample simulation structure 70 provides the curve “G” in FIG. 6,which represents an electrical interface or cross-talk level sensedbetween the electrically conductive structure 70 a and the conductivesubstrate 70 f.

In inspecting graphs A, B and G, it should be understood that usinggrounded Cu as the interface portion 38 b, provides a relatively greatershielding to electrical interference or cross-talk (e.g. graph A) thanusing oxide or the other insulating materials as the interface portion38 b ₁ (e.g. graph G). Furthermore, when ungrounded Cu material is usedas the interface portion 38 b ₁, approximately a 15 dB of isolationimprovement is realized (e.g. graph B), as opposed to using oxidematerial or other insulating material as the interface portion 38 b,(e.g. graph G).

Prior to these simulations, it was believed that there would be noimprovement in isolation when interchanging between using Cu or anotherconductive material and oxide materials as the interface portion 38 b ₁.When oxide material is used as the interface portion 38 b ₁, thecoupling between the electrically conductive structure 70 a and theconductive substrate 70 f is formed via a single capacitance formedbetween the conductive structure 70 a and the conductive substrate 70 f,where the insulating material 70 d, interface portion 38 b ₁, andinsulating layer 70 e serve as interlayer dielectrics of thecapacitance.

When a conductive material such as Cu is used as the interface portion38 b ₁, the coupling between the electrically conductive structure 70 aand the conductive substrate 70 f is formed via two series capacitances.The first capacitance is formed between the conductive structure 70 aand interface portion 38 b ₁ while the second capacitance is formedbetween the interface portion 38 b ₁ and the conductive substrate 70 f.Further, the insulating materials 70 d, 70 e, respectively serve asinterlayer dielectrics for the first and second capacitances. Employinga simple parallel plate model, the effective capacitance between theconductive structure 70 a and the conductive substrate 70 f should bealmost the same regardless of whether Cu or oxide is used as theinterface portion 38 b ₁. However, as represented in FIG. 6 by thegraphs B and G, this is not the case since the graph B includes arelatively lower dB level (e.g. 15 dB relatively lower cross-talk levelbetween the conductive structure 70 a and the conductive substrate 70 f)and the graph G includes a relatively higher dB level (e.g. 15 dBrelatively higher cross-talk level between the conductive structure 70 aand the conductive substrate 70 f).

The role of fringing fields greatly affects the capacitance between theconductive structure 70 a and the conductive substrate 70 f and variesdepending on the material used for the interface portion 38 b ₁. Sincethe interface portion 38 b ₁ of the sample simulation structure 70 issignificantly larger than both the conductive structure 70 a and theconductive substrate 70 f, large fringing fields exist between theconductive structure 70 a and the conductive substrate 70 f. When Cu isused as the interface portion 38 b ₁, the overall capacitance of thesample simulation structure 70 will be dominated by the smallercapacitance of the first and second capacitances, as described above.

More precisely and with respect to the first series capacitance, whichis defined between the conductive structure 70 a and the interfaceportion 38 b ₁, the first capacitance will be largely determined by thearea of the conductive structure 70 a, because the conductive structure70 a is two orders of magnitude smaller than the interface portion 38 b₁. Accordingly, the first capacitance is approximately two orders ofmagnitude smaller than the second capacitance, which is defined betweenthe interface portion 38 b ₁ and the conductive substrate 70 f.Therefore, the first capacitance dominates the effective capacitancebetween the conductive structure 70 a and the conductive substrate 70 f.The significantly smaller first capacitance, as described above, whichis present in structure 70 when Cu is used as the interface portion 38 b₁, accounts for the 15 dB difference in the S21 test simulation.

Referring to FIGS. 6 and 8 collectively, to further validate thistheory, the S21 simulation is executed on the sample simulationstructure 80 (FIG. 8). The sample simulation structure 80 includessimilar layers and/or portions as described above with respect to FIG.7, however, the width W₂′ (FIG. 8) of the interface portion 38 b ₂ (FIG.8) is reduced. In particular, the width W₂′ of the interface portion 38b ₂ is reduced to be similar to the width W₃ (FIG. 8) of the conductivesubstrate 70 f (FIG. 8), which reduces the effect of fringing fieldswhen oxide is used as the interface portion 38 b ₂ and which increasesthe coupling capacitance when Cu is used as the interface portion 38 b₂.

As predicted by the theory above, when using oxide for the interfaceportion 38 b ₂, the S21 simulation provides graph “F” in FIG. 6, whichrepresents an improvement in the interference or cross-talk sensedbetween the conductive structure 70 a (FIG. 8) and the conductivesubstrate 70 f (FIG. 8). On the other hand, when using Cu for theinterface portion 38 b ₂, the S21 simulation provides graph “C” in FIG.6, which represents an increase or worsening in the level ofinterference or cross-talk sensed between the conductive structure 70 aand the conductive substrate 70 f.

Referring to FIGS. 6 and 9 collectively, the sample simulation structure90 (FIG. 9) includes substantially equivalent layers and/or portions asdescribed above in detail with respect to FIG. 7, however, theinsulating layer 70 d′ (FIG. 9), the interface portion 38 b ₃ (FIG. 9),the insulating layer 70 e″ (FIG. 9) and the conductive substrate 70 f′(FIG. 9) are all reduced to the width W₁ (FIG. 9) of the conductivestructure 70 a (FIG. 9), which in the exemplary embodiment isapproximately equal to 1 μm.

As further predicted by the theory above, when using oxide material forthe interface portion 38 b ₃ (FIG. 9), the S21 simulation provides graph“E” in FIG. 6, which represents a further improvement in theinterference or cross-talk realized between the conductive structure 70a and the conductive substrate 70 f′ (FIG. 9). On the other hand, whenusing Cu material for the interface portion 38 b ₃ (FIG. 9), the S21simulation provides graph “D” in FIG. 6, which represents a continuedworsening in the level of interference or cross-talk sensed between theconductive structure 70 a and the conductive substrate 70 f.

Although, the above described interface portion 38 b incorporated inFIGS. 1-4 and the variations thereof 38 b ₁, 38 b ₂, 38 b ₃ incorporatedin FIGS. 7-9 have been shown and described as including conductivematerials, such as Cu, as well as insulating materials, such as oxide,it should be understood that the interface portions 38 b and variationsthereof 38 b ₁, 38 b ₂, 38 b ₃ can include a number of other materials,compounds or alloys that provide shielding properties to electricalinterference or cross-talk between elements of the multi-layerintegrated semiconductor structures 10, 10 b, 10 c, 10 d (FIGS. 1-4). Itshould be further understood that the interface portions 38 b andvariations thereof 38 b ₁, 38 b ₂, 38 b ₃ can include a number of otherdimensions not specifically shown herein, which provide shieldingproperties to electrical interference or cross-talk between elements ofthe multi-layer integrated semiconductor structures 10, 10 b, 10 c, 10 d(FIGS. 1-4).

Having thus described at least one illustrative embodiment of theinvention, various alterations, modifications and improvements willreadily occur to those skilled in the art. Such alterations,modifications and improvements are intended to be within the scope andspirit of the invention. Accordingly, the foregoing description is byway of example only and is not intended as limiting. The invention'slimit is defined only in the following claims and the equivalentsthereto. All references and publications cited herein are expresslyincorporated herein by reference in their entirety.

1. A multi-layer integrated semiconductor structure, comprising: a firstsemiconductor structure comprising a first surface semiconductorelements associated with a first semiconductor signaling technology; asecond semiconductor structure comprising a second surface andsemiconductor elements associated with a second semiconductor signalingtechnology; and an interface disposed between the first surface and thesecond surface, the interface comprising a first portion adapted toprovide a communication interface between the first and secondsemiconductor structures and a second portion adapted to reduceelectrical interference between signals propagating along the first andsecond semiconductor structures, the second portion being directlycoupled to the first surface and the second surface, at least one of thefirst and second interface portions corresponding to a conductivebonding interface which secures the first surface of the firstsemiconductor structure to the first surface of the second semiconductorstructure.
 2. The multi-layer integrated semiconductor structure ofclaim 1, wherein the first portion of the interface includes anelectrically conductive adhesive material securing the first surface tothe second surface.
 3. The multi-layer integrated semiconductorstructure of claim 1, wherein the first portion of the interfaceincludes an electrically conductive material.
 4. The multi-layerintegrated semiconductor structure of claim 1, wherein the secondportion of the interface includes an electrically conductive adhesivematerial.
 5. The multi-layer integrated semiconductor structure of claim4, wherein the electrically conductive adhesive material is grounded. 6.The multi-layer integrated semiconductor structure of claim 5, whereinthe electrically conductive adhesive material includes at least one ofcopper, gold, aluminum or a metal alloy.
 7. The multi-layer integratedsemiconductor structure of claim 1, wherein the second portion of theinterface includes a dielectric adhesive material.
 8. The multi-layerintegrated semiconductor structure of claim 7, wherein the dielectricadhesive material includes an organic material.
 9. The multi-layerintegrated semiconductor structure of claim 7, wherein the dielectricadhesive material includes an inorganic material.
 10. The multi-layerintegrated semiconductor structure of claim 1, wherein the firstsemiconductor signaling technology includes digital signaling relatedtechnology.
 11. The multi-layer integrated semiconductor structure ofclaim 1, wherein the second semiconductor signaling technology includesanalog signaling related technology.
 12. The multi-layer integratedsemiconductor structure of claim 1, wherein the first and secondinterface portions are provided from an electrically conductive adhesiveadapted to adhesively couple the first surface to the second surface.13. The multi-layer integrated semiconductor structure of claim 12,wherein the first surface corresponds to a top surface of the firstsemiconductor structure.
 14. The multi-layer integrated semiconductorstructure of claim 13, wherein the second surface corresponds to abottom surface of the second semiconductor structure.
 15. Themulti-layer integrated semiconductor structure of claim 13, wherein thefirst second surface corresponds to a top surface of the secondsemiconductor structure.
 16. The multi-layer integrated semiconductorstructure of claim 12, wherein the first surface corresponds to a bottomsurface of the first semiconductor structure.
 17. The multi-layerintegrated semiconductor structure of claim 16, wherein the secondsurface corresponds to a top surface of the second semiconductorstructure.
 18. The multi-layer integrated semiconductor structure ofclaim 16, wherein the second surface corresponds to a bottom surface ofthe second semiconductor structure.
 19. The multi-layer integratedsemiconductor structure of claim 1, wherein both the first and secondportions of said interface are provided from an electrically conductivebonding material.